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Copper CMP Clean Solution

CAS Number
7732-18-5 / 77-92-9
EC Number
Unspecified
Chemical Formula
H2O + C6H8O7
Molecular Weight
Mixture g/mol

Description

Copper CMP Clean Solution is a post-chemical mechanical planarization (CMP) cleaning formulation based on deionized water and citric acid designed for removing residual slurry particles, copper oxides, and organic contaminants from wafer surfaces after copper CMP processing. Effective post-CMP cleaning is critical in copper interconnect manufacturing to prevent defects, ensure reliable via connections, and maintain device yield. The citric acid component acts as a chelating agent that complexes dissolved copper ions, preventing re-deposition and galvanic corrosion on exposed metal surfaces. This solution is compatible with standard post-CMP brush scrubber and megasonic cleaning tools.

Other Names (Synonyms)

Post-CMP Cleaner, Cu CMP Rinse, Copper Cleaning Solution

Key Technical Features

  • High Purity Grade standard
  • Consistent Batch Quality
  • Full Regulatory & REACH Support
  • Global Logistics Network enabled

Physical Properties

Appearanceclear colorless liquid
Density~1.0 g/cm³
pH2-4

Safety & Handling

Warning
GHS07· Irritant

Hazard Statements

H319Causes serious eye irritation

Precautionary Statements

P264Wash hands thoroughly after handling
P280Wear eye protection
P338IF IN EYES: Rinse cautiously with water for several minutes

Trade & Regulatory

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